Design and characterization of 500°c schmitt trigger in 4H-SiC [Elektronisk resurs]

• Two versions of Schmitt trigger, an emitter-coupled and an operational amplifier (opamp)-based, are implemented in 4H-SiC bipolar technology and tested up to 500 °C. The former benefits the simplicity, smaller footprint, and fewer number of devices, whereas the latter provides better promise for high temperature applications, thanks to its more stable temperature characteristics. In addition, the measurements in the range 25 °C - 500 °C, shows that the opamp-based version provides negative and positive slew rates of 4.8 V/μs and 8.3 V/μs, ~8 and ~3 times higher than that of the emitter-coupled version, which are 1.7 V/μs and 1 V/μs. 

Ämnesord

Engineering and Technology  (ssif)

Electrical Engineering, Electronic Engineering, Information Engineering  (ssif)

Other Electrical Engineering, Electronic Engineering, Information Engineering  (ssif)

Teknik  (ssif)

Elektroteknik och elektronik  (ssif)

Annan elektroteknik och elektronik  (ssif)

Informations- och kommunikationsteknik  (kth)

Information and Communication Technology  (kth)

Genre

government publication  (marcgt)

Indexterm och SAB-rubrik

BJT

High temperature IC

Schmitt trigger

SiC

Analog integrated circuits

Bipolar transistors

Characterization

High temperature applications

Operational amplifiers

Bipolar technology

High temperature

Operational amplifier (opamp)

Slew rate

Temperature characteristic

Silicon carbide